Published in
Royal Society of Chemistry, RSC Advances, 2(9), p. 592-598, 2019
DOI: 10.1039/c8ra07652a
Links
Tools
Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices
Journal article published in 2019 by
Chin-I. Wang 
,
Teng-Jan Chang,
Chun-Yuan Wang,
Yu-Tung Yin,
Jing-Jong Shyue ,
Hsin-Chih Lin,
Miin-Jang Chen
,
Teng-Jan Chang,
Chun-Yuan Wang,
Yu-Tung Yin,
Jing-Jong Shyue ,
Hsin-Chih Lin,
Miin-Jang Chen
This paper is made freely available by the publisher.
Full text: Download
Preprint: archiving forbidden
Data provided by 
Abstract
For high-performance Ge-based transistors, one important point of focus is interfacial germanium oxide (GeOx). An AlN buffer layer effectively suppresses the interfacial GeOx, and produces a significant enhancement of the electrical characteristics.