Published in
Royal Society of Chemistry, RSC Advances, 1(9), p. 58-64, 2019
DOI: 10.1039/c8ra08449a
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High-performance thin H:SiON OLED encapsulation layer deposited by PECVD at low temperature
Journal article published in 2019 by
Kyoung Woo Park 
,
Seunghee Lee,
Hyunkoo Lee ,
Yong-Hwan Cho,
Yong Cheon Park,
Sung Gap Im ,
Sang-Hee Ko Park
,
Seunghee Lee,
Hyunkoo Lee ,
Yong-Hwan Cho,
Yong Cheon Park,
Sung Gap Im ,
Sang-Hee Ko Park
This paper is made freely available by the publisher.
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Abstract
High-performance H:SiON single layer thin film encapsulation (TFE) was deposited by plasma enhanced chemical vapor deposition (PECVD) method. To control the characteristics of the SiON thin films, hydrogen gas was introduced during PECVD process.