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American Institute of Physics, APL Materials, 2(7), p. 022515, 2019

DOI: 10.1063/1.5054943

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Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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