Published in
2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2018
DOI: 10.1109/irmmw-thz.2018.8510420
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A1GaN/GaN Field Effect Transistors Based on Lateral Schottky Barrier Gates as Millimeter Wave Detectors
Proceedings article published in 2018 by
P. Sai,
D. B. But,
K. Nowakowski-Szkudlarek,
J. Przybytek,
P. Prystawko,
I. Yahniuk,
P. Wisniewski,
B. Stonio,
M. Slowikowski,
S. L. Rumyantsev,
W. Knap,
G. Cywinski
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