Published in
Elsevier, Materials Science in Semiconductor Processing, (89), p. 212-215, 2019
DOI: 10.1016/j.mssp.2018.09.013
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An improved DRBL AlGaN/GaN HEMT with high power added efficiency
Journal article published in 2019 by
Hujun Jia,
Shunwei Zhu,
Mei Hu,
Yibo Tong,
Tao Li,
Yintang Yang
This paper was not found in any repository, but could be made available legally by the author.
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