Normally-off GaN-on-Si Metal-Insulator-Semiconductor Field-Effect Transistor with 600-V Blocking Capability at 200 degrees C
Journal article published in 2012 by
Rongming Chu 
,
David Brown,
Daniel Zehnder,
Xu Chen,
Adam Williams,
Ray Li,
Mary Chen,
Scott Newell,
Karim Boutros,
Ieee
,
David Brown,
Daniel Zehnder,
Xu Chen,
Adam Williams,
Ray Li,
Mary Chen,
Scott Newell,
Karim Boutros,
Ieee
