Published in
American Institute of Physics, Journal of Applied Physics, 20(125), p. 203105
DOI: 10.1063/1.5082889
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Band gap renormalization in n-type GeSn alloys made by ion implantation and flash lamp annealing
Journal article published in 2019 by
S. Prucnal 
,
Y. Berencén ,
M. Wang ,
L. Rebohle,
R. Kudrawiec,
M. Polak ,
V. Zviagin,
R. Schmidt-Grund ,
M. Grundmann ,
M. Turek,
A. Droździel,
J. Grenzer,
K. Pyszniak,
J. Zuk,
M. Helm
and other authors.
,
Y. Berencén ,
M. Wang ,
L. Rebohle,
R. Kudrawiec,
M. Polak ,
V. Zviagin,
R. Schmidt-Grund ,
M. Grundmann ,
M. Turek,
A. Droździel,
J. Grenzer,
K. Pyszniak,
J. Zuk,
M. Helm
and other authors.
This paper was not found in any repository, but could be made available legally by the author.
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