Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 6(38), p. 783-785, 2017
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First Demonstration of Ga<sub>2</sub>O<sub>3</sub>Trench MOS-Type Schottky Barrier Diodes
Journal article published in 2017 by
Kohei Sasaki 
,
Daiki Wakimoto,
Quang Tu Thieu,
Yuki Koishikawa,
Akito Kuramata,
Masataka Higashiwaki ,
Shigenobu Yamakoshi
,
Daiki Wakimoto,
Quang Tu Thieu,
Yuki Koishikawa,
Akito Kuramata,
Masataka Higashiwaki ,
Shigenobu Yamakoshi
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