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IOP Publishing, Japanese Journal of Applied Physics, 10(57), p. 101101, 2018

DOI: 10.7567/jjap.57.101101

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Comprehensive investigation of the interfacial charges and dipole in GeO x /Al2O3 gate stacks of Ge MOS capacitor by postdeposition annealing

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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