Published in
American Institute of Physics, AIP Advances, 9(8), p. 095215
DOI: 10.1063/1.5046564
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Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
Journal article published in 2018 by
J. Fan 
,
O. Kapur,
R. Huang ,
S. W. King ,
C. H. de Groot,
L. Jiang
,
O. Kapur,
R. Huang ,
S. W. King ,
C. H. de Groot,
L. Jiang
This paper is made freely available by the publisher.
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