Published in
Elsevier, Microelectronics Reliability, (76-77), p. 298-303, 2017
DOI: 10.1016/j.microrel.2017.06.061
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Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level
Journal article published in 2017 by
I. Rossetto,
M. Meneghini 
,
E. Canato,
M. Barbato,
S. Stoffels,
N. Posthuma,
S. Decoutere,
A. N. Tallarico,
G. Meneghesso,
E. Zanoni
,
E. Canato,
M. Barbato,
S. Stoffels,
N. Posthuma,
S. Decoutere,
A. N. Tallarico,
G. Meneghesso,
E. Zanoni
This paper was not found in any repository, but could be made available legally by the author.
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