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Wiley, physica status solidi (b) – basic solid state physics, 1(249), p. 138-141, 2011

DOI: 10.1002/pssb.201147266

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Carrier-density dependence of the hole mobility in doped and undoped regioregular poly(3-hexylthiophene)

Journal article published in 2011 by Jakob J. Brondijk, Francesco Maddalena, Kamal Asadi ORCID, Herman J. van Leijen, Herman J. van Leijen, Martin Heeney ORCID, Paul W. M. Blom, Dago M. de Leeuw, Dago M. de Leeuw
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This paper is available in a repository.

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Abstract

We investigate the mobility of poly(3-hexylthiophene) (P3HT) over a carrier-density range from 10^15 to 10^20 cm-3. Hole-only diodes were used for densities below 10^16 cm-3 and field-effect transistors were used for carrier densities higher than 10^18 cm-3. To fill the gap, intermediate densities were probed using chemically doped Schottky diodes and transistors. Combining of the mobilities in doped and undoped devices experimentally establishes the full relation of the mobility over the whole carrier-density range.