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American Institute of Physics, Applied Physics Letters, 10(109), p. 102106

DOI: 10.1063/1.4962538

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Band alignment of Ga2O3/Si heterojunction interface measured by X-ray photoelectron spectroscopy

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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