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American Institute of Physics, Journal of Vacuum Science and Technology B, 2(30), p. 02B123

DOI: 10.1116/1.3687418

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Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device

Journal article published in 2012 by W. H. Chang ORCID, T. H. Chiang, T. D. Lin, Y. H. Chen, K. H. Wu, T. S. Huang, M. Hong, J. Kwo
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Ohmic contact resistivity of a nongold Pd/Ge/Ti/Pt on highly doped molecular beam epitaxy grown n-GaAs and In0.2Ga0.8As/GaAs (∼2 × 1018 cm−3) has been investigated by varying Pd/Ge thicknesses and rapid thermal annealing (RTA) temperature/duration. An optimized Ohmic contact was obtained in the samples with Pd/Ge of 30 nm/30 nm, using RTA at 300 °C for 10 s. Low Ohmic contact resistivity of 5.4 × 10−7 Ω cm2 on n-In0.2Ga0.8As has been achieved. The mechanism of the contact resistivity reduction has been studied using the energy-dispersive x-ray spectroscopy depth profile.