Published in

IOP Publishing, Semiconductor Science and Technology

DOI: 10.1088/1361-6641/aae006

Links

Tools

Export citation

Search in Google Scholar

Identification of interfacial defects in a Ge gate stack based on ozone passivation

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Red circle
Preprint: archiving forbidden
Red circle
Postprint: archiving forbidden
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO