Published in
Elsevier, Solid-State Electronics, (125), p. 189-197
DOI: 10.1016/j.sse.2016.07.015
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Impact of temperature and programming method on the data retention of Cu/Al 2 O 3 -based conductive-bridge RAM operated at low-current (10 μA)
Journal article published in 2016 by
A. Belmonte,
A. Fantini,
A. Redolfi,
M. Houssa 
,
M. Jurczak,
L. Goux
,
M. Jurczak,
L. Goux
This paper was not found in any repository, but could be made available legally by the author.
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