Published in
Elsevier, Microelectronics Reliability, (64), p. 589-593
DOI: 10.1016/j.microrel.2016.07.012
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Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation
Journal article published in 2016 by
G. J. Syaranamual,
W. A. Sasangka,
R. I. Made 
,
S. Arulkumaran,
G. I. Ng,
S. C. Foo,
C. L. Gan,
C. V. Thompson
,
S. Arulkumaran,
G. I. Ng,
S. C. Foo,
C. L. Gan,
C. V. Thompson
This paper was not found in any repository, but could be made available legally by the author.
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