Published in
2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
DOI: 10.1109/ipfa.2018.8452559
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Physical Mechanism Underlying the Time Exponent Shift in the Ultra-fast NBTI of High-k/Metal gated p-CMOSFETs
Proceedings article published in 2018 by
Longda ZhOU,
Bo Tang,
Hong Yang,
Hao Xu,
Yongliang Li,
Eddy Simoen,
Huaxiang Yin,
Huilong Zhu,
Chao Zhao,
Wenwu Wang,
Dapeng Chen,
Tianchun Ye 
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