Published in
American Chemical Society, ACS Applied Materials and Interfaces, 39(10), p. 33450-33456, 2018
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High-performance InSe transistors with ohmic contact enabled by nonrectifying-barrier-type indium electrodes
Journal article published in 2018 by
Yu-Ting Huang,
Yi-Hsun Chen 
,
Yi-Ju Ho,
Shih-Wei Huang,
Yih-Ren Chang,
Kenji Watanabe ,
Takashi Taniguchi,
Hsiang-Chih Chiu ,
Chi-Te Liang,
Raman Sankar ,
Fang-Cheng Chou,
Chun-Wei Chen ,
Wei-Hua Wang
,
Yi-Ju Ho,
Shih-Wei Huang,
Yih-Ren Chang,
Kenji Watanabe ,
Takashi Taniguchi,
Hsiang-Chih Chiu ,
Chi-Te Liang,
Raman Sankar ,
Fang-Cheng Chou,
Chun-Wei Chen ,
Wei-Hua Wang
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Preprint: archiving allowed
- Must obtain written permission from Editor
- Must not violate ACS ethical Guidelines
Postprint:
archiving restricted
- Must obtain written permission from Editor
- Must not violate ACS ethical Guidelines
Published version:
archiving forbidden
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