Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 10(37), p. 1284-1287, 2016
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Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure
Journal article published in 2016 by
Tsung-Ling Tsai,
Fa-Shen Jiang,
Chia-Hua Ho,
Chen-Hsi Lin,
Tseung-Yuen Tseng 
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