Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Device and Materials Reliability, 3(18), p. 364-376, 2018
DOI: 10.1109/tdmr.2018.2847338
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Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs
Journal article published in 2018 by
Rong Jiang 
,
Xiao Shen,
Jingtian Fang ,
Pan Wang ,
En Xia Zhang ,
Jin Chen,
Daniel M. Fleetwood ,
Ronald D. Schrimpf ,
Stephen W. Kaun,
Erin C. H. Kyle,
James S. Speck,
Sokrates T. Pantelides
,
Xiao Shen,
Jingtian Fang ,
Pan Wang ,
En Xia Zhang ,
Jin Chen,
Daniel M. Fleetwood ,
Ronald D. Schrimpf ,
Stephen W. Kaun,
Erin C. H. Kyle,
James S. Speck,
Sokrates T. Pantelides
This paper was not found in any repository, but could be made available legally by the author.
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