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Elsevier, Microelectronic Engineering, (178), p. 271-274, 2017

DOI: 10.1016/j.mee.2017.05.018

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Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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