Published in

International Union of Crystallography, Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 6(73), p. 1158-1163, 2017

DOI: 10.1107/s2052520617014044

Links

Tools

Export citation

Search in Google Scholar

Multi-temperature structure of thermoelectric Mg2Si and Mg2Sn

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Green circle
Postprint: archiving allowed
Green circle
Published version: archiving allowed
Data provided by SHERPA/RoMEO

Abstract

A multi-temperature structural study of Mg2Si and Mg2Sn was carried out from 100 to 700 K using synchrotron X-ray powder diffraction. The temperature dependence of the lattice parameters can be expressed as a = 6.3272 (4) + 6.5 (2) × 10−5 T + 4.0 (3) × 10−8 T 2 Å and a = 6.7323 (7) + 8.5 (4) × 10−5 T + 3.8 (5) × 10−8 T 2 Å for Mg2Si and Mg2Sn, respectively. The atomic displacement parameters (ADPs) are reported and analysed using a Debye model for the averaged U iso giving Debye temperatures of 425 (2) K for Mg2Si and 243 (2) K for Mg2Sn. The ADPs are considerably smaller for Mg2Si than for Mg2Sn reflecting the weaker chemical bonding in the Mg2Sn structure. Following the heating, an annealing effect is observed on the lattice parameters and peak widths in both structures, presumably due to changes in the crystal defects, but the lattice thermal expansion is almost unchanged by the annealing. This work provides accurate structural parameters which are of importance for studies of Mg2Si, Mg2Sn and their solid solutions.