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American Institute of Physics, Applied Physics Letters, 2(99), p. 021903

DOI: 10.1063/1.3610469

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Synchrotron based photoluminescence excitation spectroscopy applied to investigate the valence band splittings in AlN and Al0.94Ga0.06N

Journal article published in 2011 by Martin Feneberg ORCID, Marcus Röppischer, Norbert Esser, Christoph Cobet, Benjamin Neuschl, Tobias Meisch, Klaus Thonke, Rüdiger Goldhahn ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

We demonstrate that synchrotron-based photoluminescence excitation (PLE) spectroscopy is a versatile tool for determining valence band splittings of AlN and high aluminum content AlGaN. PLE results are independently confirmed by synchrotron-based spectroscopic ellipsometry. The splittings between the ordinary and the extraordinary absorption edges are found to be -240 meV and -170 meV for AlN and Al0.94Ga0.06N, respectively. These values differ from the crystal field energy due to residual strain.