Published in
American Physical Society, Physical Review Letters, 13(110), 2013
DOI: 10.1103/physrevlett.110.136803
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Atomic Structure of Interface States in Silicon Heterojunction Solar Cells
,
T. F. Schulze,
M. Fehr,
L. Korte,
B. Rech ,
K. Lips,
M. Rohrmüller,
E. Rauls,
W. G. Schmidt ,
U. Gerstmann
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Abstract
Combining orientation dependent electrically detected magnetic resonance EDMR and g tensor calculations based on density functional theory DFT we assign microscopic structures to paramagnetic states involved in spin dependent recombination at the interface of amorphous crystalline silicon a Si H c Si heterojunction solar cells. We find that i the interface exhibits microscopic roughness, ii the electronic structure of the interface defects is mainly determined by c Si, iii identify the microscopic origin of the conduction band tail state in the a Si H layer and iv propose a detailed recombination mechanism