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American Institute of Physics, Applied Physics Letters, 20(103), p. 202101

DOI: 10.1063/1.4829857

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Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

Journal article published in 2013 by Pierre Tchoulfian, Fabrice Donatini, François Levy, Benoît Amstatt, Amélie Dussaigne, Pierre Ferret, Étienne Bustarret, Etienne Bustarret, Julien Pernot ORCID
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This paper is available in a repository.

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Abstract

Combined thermoelectric-resistivity measurements and micro-Raman experiments have been performed on single heavily Si-doped GaN wires. In both approaches, similar carrier concentration and mobility were determined taking into account the non-parabolicity of the conduction band. The unique high conductivity of Si-doped GaN wires is explained by a mobility µ=56 cm2 /V s at a carrier concentration n = 2.6 10^20 /cm 3. This is attributed to a more efficient dopant incorporation in Si-doped GaN microwires as compared to Si-doped GaN planar layers. (c) 2013 AIP Publishing LLC.