Published in

American Institute of Physics, Applied Physics Letters, 9(113), p. 093501

DOI: 10.1063/1.5043509

Links

Tools

Export citation

Search in Google Scholar

High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer

Journal article published in 2018 by IlPyo Roh, SangHyeon Kim, Dae-Myeong Geum ORCID, Wenjie Lu, YunHeub Song, Jesús A. del Alamo ORCID, JinDong Song
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO