Published in
Elsevier, Computational Materials Science, (141), p. 341-352
DOI: 10.1016/j.commatsci.2017.09.046
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Stochastic model and simulation of growth and coalescence of spontaneously formed GaN nanowires in molecular beam epitaxy
Journal article published in 2018 by
K. K. Sabelfeld 
,
E. G. Kablukova
,
E. G. Kablukova
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