Published in
American Chemical Society, ACS Applied Materials and Interfaces, 3(9), p. 3149-3155, 2017
Links
Tools
Resistance Switching Characteristics Induced by O2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory
Journal article published in 2017 by
Po-Hsun Chen 
,
Ting-Chang Chang ,
Kuan-Chang Chang,
Tsung-Ming Tsai,
Chih-Hung Pan,
Min-Chen Chen,
Yu-Ting Su,
Chih-Yang Lin,
Yi-Ting Tseng,
Hui-Chun Huang,
Huaqiang Wu,
Ning Deng,
He Qian,
Simon M. Sze
,
Ting-Chang Chang ,
Kuan-Chang Chang,
Tsung-Ming Tsai,
Chih-Hung Pan,
Min-Chen Chen,
Yu-Ting Su,
Chih-Yang Lin,
Yi-Ting Tseng,
Hui-Chun Huang,
Huaqiang Wu,
Ning Deng,
He Qian,
Simon M. Sze
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Preprint: archiving allowed
- Must obtain written permission from Editor
- Must not violate ACS ethical Guidelines
Postprint:
archiving restricted
- Must obtain written permission from Editor
- Must not violate ACS ethical Guidelines
Published version:
archiving forbidden
Data provided by 