Published in
American Chemical Society, Nano Letters, 3(18), p. 1937-1945, 2018
DOI: 10.1021/acs.nanolett.7b05338
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Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact
Journal article published in 2018 by
Hyung Gon Shin,
Hyong Seo Yoon,
Jin Sung Kim,
Minju Kim 
,
June Yeong Lim,
Sanghyuck Yu,
Ji Hoon Park,
Yeonjin Yi ,
Taekyeong Kim,
Seong Chan Jun ,
Seongil Im
,
June Yeong Lim,
Sanghyuck Yu,
Ji Hoon Park,
Yeonjin Yi ,
Taekyeong Kim,
Seong Chan Jun ,
Seongil Im
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Preprint: archiving allowed
- Must obtain written permission from Editor
- Must not violate ACS ethical Guidelines
Postprint:
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- Must obtain written permission from Editor
- Must not violate ACS ethical Guidelines
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