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American Institute of Physics, Journal of Vacuum Science and Technology B, 6(35), p. 061201

DOI: 10.1116/1.4995816

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Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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