Published in
The Electrochemical Society, ECS Journal of Solid State Science and Technology, 5(6), p. P350-P355
DOI: 10.1149/2.0011707jss
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Ultra-Shallow Junction Formation by Monolayer Doping Process in Single Crystalline Si and Ge for Future CMOS Devices
Journal article published in 2017 by
Shang-Shiun Chuang,
Ta-Chun Cho,
Po-Jung Sung,
Kuo-Hsing Kao,
Henry J. H. Chen,
Yao-Jen Lee,
Michael I. Current,
Tseung-Yuen Tseng 
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