Published in
The Electrochemical Society, ECS Journal of Solid State Science and Technology, 11(6), p. S3078-S3080
DOI: 10.1149/2.0161711jss
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AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers
Journal article published in 2017 by
Fan Ren,
Stephen J. Pearton,
Shihyun Ahn,
Yi-Hsuan Lin,
Francisco Machuca,
Robert Weiss,
Alex Welsh,
Martha R. McCartney,
David J. Smith,
Ivan I. Kravchenko
This paper was not found in any repository, but could be made available legally by the author.
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