Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 8(65), p. 3229-3236, 2018
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Improved Switching Stability and the Effect of an Internal Series Resistor in HfO<sub>2</sub>/TiO<sub><italic>x</italic></sub> Bilayer ReRAM Cells
Journal article published in 2018 by
Alexander Hardtdegen 
,
Camilla La Torre ,
Felix Cuppers ,
Stephan Menzel ,
Rainer Waser ,
Susanne Hoffmann-Eifert
,
Camilla La Torre ,
Felix Cuppers ,
Stephan Menzel ,
Rainer Waser ,
Susanne Hoffmann-Eifert
This paper was not found in any repository, but could be made available legally by the author.
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