Published in
American Institute of Physics, Applied Physics Letters, 7(113), p. 079903
DOI: 10.1063/1.5050885
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Erratum: “A GaN–SiC hybrid material for high-frequency and power electronics” [Appl. Phys. Lett. 113, 041605 (2018)]
Journal article published in 2018 by
Jr-Tai Chen 
,
Johan Bergsten,
Jun Lu,
Erik Janzén,
Mattias Thorsell,
Lars Hultman ,
Niklas Rorsman ,
Olof Kordina
,
Johan Bergsten,
Jun Lu,
Erik Janzén,
Mattias Thorsell,
Lars Hultman ,
Niklas Rorsman ,
Olof Kordina
This paper is made freely available by the publisher.
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