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Institute of Electrical and Electronics Engineers, IEEE Transactions on Nuclear Science, 1(64), p. 176-180, 2017

DOI: 10.1109/tns.2016.2624294

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Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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