Published in
American Institute of Physics, Applied Physics Letters, 10(112), p. 103503
DOI: 10.1063/1.5022088
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Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors
Journal article published in 2018 by
Rihui Yao 
,
Zeke Zheng,
Mei Xiong,
Xiaochen Zhang,
Xiaoqing Li,
Honglong Ning ,
Zhiqiang Fang,
Weiguang Xie ,
Xubing Lu,
Junbiao Peng
,
Zeke Zheng,
Mei Xiong,
Xiaochen Zhang,
Xiaoqing Li,
Honglong Ning ,
Zhiqiang Fang,
Weiguang Xie ,
Xubing Lu,
Junbiao Peng
This paper was not found in any repository, but could be made available legally by the author.
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