Published in
American Institute of Physics, Journal of Applied Physics, 12(120), p. 125703, 2016
DOI: 10.1063/1.4963121
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Recombination activity of light-activated copper defects inp-type silicon studied by injection- and temperature-dependent lifetime spectroscopy
Journal article published in 2016 by
Alessandro Inglese 
,
Jeanette Lindroos,
Henri Vahlman,
Hele Savin
,
Jeanette Lindroos,
Henri Vahlman,
Hele Savin
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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