The electrical properties of highly conductive ITO/Ag/ITO multilayer film at cryogenic temperatures have been presented in the paper for the first time. A good electrical conductivity and high thermal resistance of ITO/Ag/ITO are desirable features at cryogenic temperatures. Elements in ITO/Ag/ITO (AgHT™) were patterned using fiber laser ablation. Close to a linear (R² = 0.999) relationship between resistance and temperature in the range of 293–55 K was confirmed. The dynamics of resistance changes is of the order of 9 × 10⁻⁴ 1/K. Carrier concentration and mobility have been determined on the basis of Hall voltage measurements. Structures patterned in AgHT™ conductive film can be seen to be suitable for passive elements of low‐temperature electronics.