Published in
American Institute of Physics, AIP Advances, 8(8), p. 085305
DOI: 10.1063/1.5034048
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Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements
Journal article published in 2018 by
Eigo Fujita,
Mitsuru Sometani 
,
Tetsuo Hatakeyama,
Shinsuke Harada,
Hiroshi Yano,
Takuji Hosoi,
Takayoshi Shimura ,
Heiji Watanabe
,
Tetsuo Hatakeyama,
Shinsuke Harada,
Hiroshi Yano,
Takuji Hosoi,
Takayoshi Shimura ,
Heiji Watanabe
This paper is made freely available by the publisher.
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