Published in
American Chemical Society, ACS Applied Materials and Interfaces, 40(9), p. 35125-35132, 2017
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Room-Temperature Activation of InGaZnO Thin-Film Transistors via He+ Irradiation
Journal article published in 2017 by
Michael G. Stanford 
,
Joo Hyon Noh,
Kyle Mahady,
Anton V. Ievlev ,
Peter Maksymovych ,
Olga S. Ovchinnikova,
Philip D. Rack
,
Joo Hyon Noh,
Kyle Mahady,
Anton V. Ievlev ,
Peter Maksymovych ,
Olga S. Ovchinnikova,
Philip D. Rack
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Preprint: archiving allowed
- Must obtain written permission from Editor
- Must not violate ACS ethical Guidelines
Postprint:
archiving restricted
- Must obtain written permission from Editor
- Must not violate ACS ethical Guidelines
Published version:
archiving forbidden
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