Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, p. 1-1
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High Performance HfO2 Back Gated Multilayer MoS2 transistors
Journal article published in 2016 by
Lakshmi Ganapathi Kolla,
Shubhadeep Bhattacharjee 
,
Mohan S.,
Navakanta Bhat
,
Mohan S.,
Navakanta Bhat
This paper was not found in any repository, but could be made available legally by the author.
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