On the use of a localized STRASS technique to obtain highly tensile strained Si regions in advanced FDSOI CMOS devices: On the use of a localized STRASS technique to obtain highly tensile strained Si regions in advanced FDSOI CMOS devices
Journal article published in 2016 by
A. Bonnevialle,
S. Reboh,
C. Le Royer,
Y. Morand,
J.-M. Hartmann,
D. Rouchon,
J.-M. Pedini,
C. Tabone,
N. Rambal,
A. Payet,
C. Plantier,
F. Boeuf,
M. Haond,
A. Claverie,
M. Vinet
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