Published in
Wiley, physica status solidi (a) – applications and materials science, 9(215), p. 1700638
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Impact of AlN/Si Nucleation Layers Grown Either by NH3 -MBE or MOCVD on the Properties of AlGaN/GaN HFETs
Journal article published in 2018 by
Hady Yacoub 
,
Thorsten Zweipfennig,
Holger Kalisch,
Andrei Vescan,
Armin Dadgar,
Matthias Wieneke,
Jürgen Bläsing,
A. Strittmatter,
Stephanie Rennesson ,
Fabrice Semond
,
Thorsten Zweipfennig,
Holger Kalisch,
Andrei Vescan,
Armin Dadgar,
Matthias Wieneke,
Jürgen Bläsing,
A. Strittmatter,
Stephanie Rennesson ,
Fabrice Semond
This paper was not found in any repository, but could be made available legally by the author.
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