Si-Doped Cu(In,Ga)Se2 Photovoltaic Devices with Energy Conversion Efficiencies Exceeding 16.5% without a Buffer Layer
Journal article published in 2018 by
Shogo Ishizuka 
,
Jiro Nishinaga,
Masayuki Iioka,
Hirofumi Higuchi,
Yukiko Kamikawa,
Takashi Koida,
Hajime Shibata,
Paul Fons
,
Jiro Nishinaga,
Masayuki Iioka,
Hirofumi Higuchi,
Yukiko Kamikawa,
Takashi Koida,
Hajime Shibata,
Paul Fons
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