Published in
American Institute of Physics, Journal of Applied Physics, 18(122), p. 185701
DOI: 10.1063/1.5004524
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Delayed avalanche breakdown of high-voltage silicon diodes: Various structures exhibit different picosecond-range switching behavior
Journal article published in 2017 by
Viktor Brylevskiy,
Irina Smirnova,
Andrej Gutkin,
Pavel Brunkov 
,
Pavel Rodin,
Igor Grekhov
,
Pavel Rodin,
Igor Grekhov
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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