Published in
American Institute of Physics, Journal of Applied Physics, 5(124), p. 055702
DOI: 10.1063/1.5027680
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Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
Journal article published in 2018 by
F. S. Choi 
,
J. T. Griffiths ,
Chris Ren ,
K. B. Lee,
Z. H. Zaidi ,
P. A. Houston,
I. Guiney,
C. J. Humphreys ,
R. A. Oliver ,
D. J. Wallis
,
J. T. Griffiths ,
Chris Ren ,
K. B. Lee,
Z. H. Zaidi ,
P. A. Houston,
I. Guiney,
C. J. Humphreys ,
R. A. Oliver ,
D. J. Wallis
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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