Published in
American Institute of Physics, Journal of Applied Physics, 8(122), p. 085706
DOI: 10.1063/1.5000238
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Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission
Journal article published in 2017 by
S. Matta,
J. Brault,
T. H. Ngo 
,
B. Damilano ,
M. Korytov,
P. Vennéguès,
M. Nemoz,
J. Massies,
M. Leroux,
B. Gil
,
B. Damilano ,
M. Korytov,
P. Vennéguès,
M. Nemoz,
J. Massies,
M. Leroux,
B. Gil
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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