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Elsevier, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1-4(186), p. 234-239

DOI: 10.1016/s0168-583x(01)00949-1

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Photo-dissociation of hydrogen passivated dopants in gallium arsenide

Journal article published in 2002 by L. Tong, J. A. Larsson, M. Nolan ORCID, M. Murtagh, J. C. Greer, M. Barbe, F. Bailly, J. Chevallier, F. S. Silvestre, D. Loridant-Bernard, E. Constant, F. M. Constant
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This paper is available in a repository.

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Abstract

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga-H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As-H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds.