Published in
American Institute of Physics, Applied Physics Letters, 21(108), p. 213503
DOI: 10.1063/1.4952715
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Vertical architecture for enhancement mode power transistors based on GaN nanowires
Journal article published in 2016 by
F. Yu,
D. Rümmler,
J. Hartmann,
L. Caccamo,
T. Schimpke 
,
M. Strassburg,
A. E. Gad,
A. Bakin,
H.-H. Wehmann,
B. Witzigmann,
H. S. Wasisto,
A. Waag
,
M. Strassburg,
A. E. Gad,
A. Bakin,
H.-H. Wehmann,
B. Witzigmann,
H. S. Wasisto,
A. Waag
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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